Collector-Base voltageCollector-Basis Voltage:40V
Collector-zender Voltage:30V
Emitter-base voltage:-6V
De dissipatie van de collectormacht:1.25W
VCEO:-30V
VEBO:-6V
Type:Triodetransistor
Materiaal:silicium
Machtsmosfet Transistor:Aan-126 plastic-kapsel in
Collector-Base voltageCollector-Basis Voltage:40V
Collector-zender Voltage:30V
Emitter-base voltage:6v
VCBO:-60V
VCEO:-50V
VEBO:-5V
Collector-Base Voltage:700V
Verbindingstemperatuur:150 ℃
Emitter-base voltage:9V
PC:1.25W
Verbindingstemperatuur:150 ℃
Opslagtemperatuur:-55-150℃
Ononderbroken collectorstroom -:3A
VCEO:30V
VCBO:40V
De dissipatie van de collectormacht:1.5W
Verbindingstemperatuur:150 ℃
VCBO:600v
VCBO:40V
VCEO:30V
VEBO:6v
Collector-Base Voltage:700V
Collector-zender Voltage:400V
Ononderbroken collectorstroom -:1.5A
VCBO:-40v
VCEO:-30V
Opslagtemperatuur:-55-150℃